Content, Methods, Prep, and Layout2026-01-07T17:59:42-08:00

 

Content & Design of The International XPS Spectra-Base System

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Overview

Each page provides XPS spectra from a series of materials:  pure element, native oxide, most common pure oxide, and other chemical compounds that may include hydroxide, oxy-hydroxide, carbonate, bi-carbonate, sulfide, sulfate, nitride, nitrate, phosphide, phosphate, selenide, telluride. Most of the oxides are single crystals or natural crystals freshly cleaved to expose bulk. Semiconductor wafers and crystals have been cleaved to expose bulk. There are time-based Profiles, Flood Gun tests, and Auger spectra. To add a bit of color, there are two sets of photos from crystals that include the element being displayed. A total of six (6) different BE tables from various sources are included.

The database currently (Jan 2025) has:

      • >500 survey spectra,
      • >2,500 chemical state spectra,
      • >2,500 peak-fits of chemical state spectra,
      • >600 overlays of chemical state spectra,
      • >400 side-by-side comparisons of chemical state spectra.
      • >150 time study Montage plots showing UHV gas capture by freshly ion etched metals,
      • >150 overlays showing flood gun effects on native oxides
      • >200 photos of minerals containing element of interest
      • >90 tables of key information listing peak overlaps, spin-orbit terms, BEs, Scofield cross-sections and IMFP of pure element
      • >500 tables of BEs (from 6 different sources)



Major Components on each Page

Basic Information Section  (spectra and BE tables)

  • Three (3) links to:  (a) Periodic Table,  (b) XPS Database of Polymers, and  (c) Six (6) BE Tables
  • ….Page Index (not yet active).
  • Chemical State Spectra (raw and peak-fit with details)
  • Survey Spectra (fully labelled, pure element, native oxide, pure oxide, other chemical states)
  • Carbon (1s) and O (1s) spectra (or F (1s), S (2p), N (1s), P (2p), Cl (2p), Br (3d), I (4d), Se (3d), Te (4d) etc.)
  • Valence Band Spectra
  • Spectra of Auger Signals
  • Plasmon Spectra
  • Table of Overlaps, BEs, Scofield cross-sections, and IMFP
  • Links to home page – Periodic Table and Six (6) BE Tables
  • Artefacts of ion etching
  • Side-by-side spectra for comparisons (native oxide versus element versus pure oxide…)
  • Overlays of related spectra (e.g. metal, native oxide, pure oxide, sulfide, BE shifts, peak-shape differences)
  • Six (6) Tables of Chemical State BEs from different websites (BEs are from smallest to largest)
  • The NIST table is quite long and organized by BE value (smallest to largest)
  • Histograms of pure element BEs, pure oxide BEs and others from NIST SRD-20 database of BEs
  • Periodic Table showing results of Statistical Analysis of BEs in NIST SRD-20 database of BEs
  • …the Polymer Database is currently in progress

Advanced Information Section  (advanced spectra & research studies)

  • Comparison of Element, Pure Oxide, and Fluoride of the Element (showing extreme range of BEs)
  • Detailed set of spectra from common pure oxide
  • Display of spectra having Shake-up
  • Display of spectra having Multiplet Splitting
  • Flood gun effect on Native Oxide of Element  (flood gun OFF versus ON and Floating:  C (1s) O (1s) and Metal Signal)
  • XPS Study of UHV Gas Captured by Freshly Ion Etched Element – in main analysis chamber – overnight run – C (1s), O (1s) and metal signal
  • AES (Auger) Study of UHV Gas Captured by Freshly Ion Etched Element – in main analysis chamber – overnight run – C (1s), O (1s) and metal signal
  • Chemical State Spectra from High Energy Resolution Auger instrument having CHA (HSA) electron analyzer

Tables of XPS Facts, Guidance & Information

  • Basic information about element
  • Information useful for peak-fitting main element signal
  • General guidance for peak-fitting
  • Commonplace Contaminants
  • Data collection guidance
  • Data collection settings for each element
  • Effects of argon ion etching
  • Gas phase spectra of related species if available


Peak-Fitting Parameters & Options
Used to Peak-fit Chemical Compound Spectra

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Philosophy for Peak-fitting

Our philosophy is to collect spectra under analysis conditions that are practical, readily reproduced, and typically used in laboratories that use monochromatic X-ray sources and work under real world practical analysis conditions. We have assumed that the most XPS laboratories need practical reference spectra and will not spend the time or money to produce and to analyze pure, clean surfaces under ultimate energy resolution conditions. For practical reasons we used the C (1s) spectra from the naturally formed layer of adventitious hydrocarbons because that signal is the "de facto" standard for charge referencing insulating materials.



Peak-Fitting Parameters
Used to Peak-fit Chemical State Spectra in
The International XPS Database of XPS Spectra

After "Data Processing and Charge Shifting" all chemical state spectra, then you must choose the Peak-fitting Parameters for your spectra

The words highlighted using Dark-Red Bold lettering are the methods used on most of the spectra in The International XPS Database of XPS Spectra. The other information is a guide for alternative methods or special methods to help the XPS analyst peak-fit chemical state spectra.

  • Step 1.  Preview Spectrum Baseline Region
    • Vertically expand all spectra to get a look at the onset upward curving region of the peak at high BE
    • This helps us to locate a valid flat baseline region at the low BE end and reveals small peaks at high BE end
  • Background Type (BG)
    • Linear is preferred (almost flat) for nearly all insulators and a few conductors
    • Shirley and Sherwood were developed to be used on conductive materials, and are often used on insulators for convenience, without scientific basis
    • Shirley and Sherwood (Proctor) are used when the baseline above the peaks is definitely higher than the lower baseline for conductors
    • Shirley was originally designed for use on the Valence Band spectrum of Pure Gold.  There is no basis for other uses.
    • In various cases neither of these background types will give a best result
    • The Tougaard background is not used on any spectra in this database.
    • There are other backgrounds that "actively" change the background and the peak-fit to produce a well define result expected by the analyst.
  • Background Endpoints and Endpoint Averaging
    • Vertically expand the spectrum to look at the baseline
    • Vertically expand the spectrum after adding the background to make sure baseline endpoints are in a nearly "flat" or linear region of the baseline
    • The low BE endpoint, where the baseline is flat, is usually easy to select visually.
    • Use 3-5 data-points (0.2-0.5 eV spread) to make an average baseline endpoint.
    • Avoid making any endpoints on the upward edge of any peak
    • The high BE endpoint is more difficult to select because of shake-up and satellite peaks. Avoid peaks. Look for a nearly flat region.
    • For most correct fit, you should include all shake-up and satellite peaks which can make the peak-fit very challenging to optimize
  • Number of Expected Peaks – Always use Minimum (more than 5 for one spin-orbit is probably wrong) 
    • Use Minimum number of peaks based on obvious shoulders, obvious asymmetry, and peak maxima.
    • For C (1s) there are usually 4 peaks
    • For O (1s) there are usually 2-3 peaks
      • metal oxide peaks range from 529 to 531 eV
      • organic oxide peaks range from 531 to 533 eV
      • hydroxides and carbonates range from 532 to 533 eV
      • adsorbed water in the form of hydroxide groups appear in the 532 to 533 eV range
    • For metal peaks, there are often 2 peaks for a "1s" or "2s" peak. One peak dominates, the other is small and is due to degradation or contamination.
    • FWHM ranges from 1.2-1.6 eV for most peaks. 
    • For some conductive compounds the FWHM ranges from 1.0-1.2 eV
    • For O (1s) peaks from hydroxides and sulfates the FWHM can range from 1.6 to 1.8 eV
  • Full Width at Half of Maximum (Peak-width) – FWHM – based on FWHM tables
    • FWHM are expected to be vary similar in any peak-fit for any chemical compound.
    • FWHM for individual peaks can be different within a peak-fit by no more than 20% of main peak FWHM
    • FWHM for a spectrum that has both a conductor peak and insulator peaks can vary greatly – see next lines of guidance
    • FWHM ranges from 1.2-1.6 eV for most peaks. 
    • Metal FWHM range = 0.4 to 1.0 eV  (usually 0.6-0.8 eV)
    • Metal Oxide FWHM range = 1.1 to 2.0 eV  (usually 1.3-1.6 eV)
    • Use same FWHM unless you have reference FWHM
  • Gaussian-Lorentzian Peak-shape %s
    • Typical G:L for Inorganics (80:20)  This is the most common peak-shape
    • Typical G:L for Polymers (90:10)
    • G:L ratio can be 70:30 for 1s or 2s peaks at high BE >500 eV
    • G:L ratio increases to 50:50 at higher BE
    • In a few cases G:L was 100:0 for O (1s) or other "s" peaks
  • Peak Asymmetry % (Doniach-Sunjic) for conductors and rarely insulators
    • Peak asymmetry is seldom used in the XPSDATABASE spectra peak-fits.
    • Added smaller peaks to replace asymmetry often gives better result.  These peaks are attributed to Core-Valence interactions the same as Doniac-Sunjic.
    • Never used on insulators unless using ultra high energy resolution on polymers
    • Typically use 15% for conductive materials after initial fit.  Often need to constrain FWHM to get best fit.
    • Maximum 50% for high BE peaks of conductors
    • CasaXPS and other specialty software provide asymmetric Lorentzian (LA) peak-shape that are intended to improve peak-fit on the high BE side of the main peak especially for conductive materials.  This is a cosmetic fix.  There is no theoretical basis for that shape at this time.
  • Peak Area Ratios (Theoretical)
    • for "p" orbitals:  2:1
    • for "d" orbitals:  6:4
    • for "f" orbitals:   8:6
    • It is best to use the Scofield cross-sections for high precision peak-fitting of peak area ratios
    • None of these peak-fits have used Scofield cross-section area ratios
  • Peak Area Constraints for Peak Area Ratios or Empirical Chemistry Ratios
    • Need to use whenever there are overlaps, contaminants or other oxidation states to reveal correct ratios and presence or absence of minor components
  • BE Constraints (when correct BE is known)
    • BEs are constrained to BEs from pure compounds or metals when there are overlaps
  • FWHM Constraints (when FWHM control is essential)
    • FWHM are constrained to stop peak-fit from increasing beyond 2.0 eV or decreasing to less than 0.4 eV for normal chemical state spectra
  • Difference in BE Constraint based on Metal Spin-Orbit splitting (difference is known)
    • Example:  Si (2p3/2) is 0.60 eV lower than Si (2p1/2)
    • Example:  Cu (2p3/2) is 20.0 eV lower than Cu (2p1/2)
  • Chi-Square that is acceptable
    • <4 for low count rate data which is typical for old XPS instruments (SSI S-Probe)
    • <15 for very high count rate data which is typical for new XPS instruments
  • Decide if Differential Charging Tails are Present or Absent – Low BE side
    • Peak-fit tail as a peak, and then delete that peak from peak-fit and label as charging


Peak-Fitting Example-Results
when applying different parameters

Choices for Baseline / Background Type and Endpoint Range



Choose FWHM for First Peak at Lowest BE

Use same FWHM for all peaks for first peak-fit
If one peak is much wider and symmetrical then use a FWHM that is 2X wider just for that peak (use constraint?)

In general, pure metal peaks are 2X more narrow than non-conductive chemical compound peaks (insulators).
Metal FWHM = 0.9 eV, Corresponding Metal Oxide FWHM = 1.7 eV

In general, the largest FWHM for Insulators is 1.8 eV.  A few are slightly larger (eg 2.0 eV).

Examples of FWHM For Chemical Compounds and Insulators

Slide4.png (1632×1056)

Examples of FWHM For Pure Metals and Conductive Materials



Decide Total Number of Peaks in Spectrum – Use Minimum



Three (3) Peak-fitting Examples (A-C)
Difficulty Levels:  1-3



Example A:    Level 1 – Peak-fitting of Single Chemical State Spectrum



Example B:    Level 2 – Peak-fitting of Complicated Chemical State Spectrum



Example C:   Level 3 – Peak-fitting Complicated Spectrum with Constraints



Sample Preparation,  Sample Mounting,
& Sources of Samples



Philosophy for Sample Preparation – used by The XPS Library for this Database

Our fundamental philosophy is to collect spectra that are readily reproduced in laboratories that use monochromatic AlK-α X-ray sources, and to work under real-world practical analysis conditions with minimal sample preparation. We have avoided special sample preparations or special cleaning procedures because they are not generally available.

In general, samples should be handled with freshly cleaned tools and analyzed in its' "as-received" condition. Vital information about the chemical or sample is provided by analyzing the as-received surface so it is vital to analyze the surface as-received.

After analyzing the sample in its' "as-received" condition, then we decide how best to prepare the sample to analyze the bulk of the sample which represents the true chemistry of the sample.  Clean, silicone oil free gloves should be used to handle all sample handling tools and the sample stage. Your service engineer should wear the same type of gloves when repairing your instrument.  If the analysis results reveal the presence of unexpected elements, then those elements are probably the result of natural minor components of the natural crystal, or accidental contamination by the chemical supplier, storage conditions, or sample preparation. This is valuable information that guides future sample preparation.



Types and Shapes of Samples and Materials used by The XPS Library for this Database

There are two basic types of chemicals that have been analyzed for this database. They are Inorganic and Organic chemicals. The database that uses a Periodic Table as its' interface, has spectra from Inorganic materials.  The database that uses a List of Polymers Table as its' interface has spectra from organic polymers and organic chemicals.

There are ten (10) basic shapes of samples (materials) that have been analyzed for this database.  The most common shapes are fine grained powders and thin sheets.

Shapes of Samples

  1. fine grained powders (easy to press into a pellet)
  2. thin sheets of pure metals
  3. small lab-grown single crystals – ranging from 5 x 10 mm, 0.5 mm thick to 10 x 10 mm, 2 mm thick
  4. large lab-grown single crystalline wafers of semiconductor materials (25 – 100 mm diameter, 1-2 mm thick)
  5. natural crystals (poly-crystals) with various shapes and sizes
  6. viscous oils and greases
  7. films and sheets made from polymers
  8. powders, pellets and beads made from polymers
  9. thin coatings on wafers
  10. coarse grains that require grinding with a mortar and pestle


Sample Preparation Method That Produces Clean Surface of Pure Bulk Chemistry

Sample Type Preparation Method with Intent to Analyze Freshly Exposed Bulk
Fine powder: Use a clean mortar & pestle, gently grind the powder enough to expose fresh bulk. Press powder into a pellet or press powder onto surface of Aluminum foil on sample mount
Granular pieces: Place inside clean plastic bag on a metal sheet, hit with hammer to form small grains, then try to grind in clean mortar & pestle
Plastic sheet: Use a clean single edge razor to scrape the surface or cut to expose the bulk
Plastic bead: Use tweezers or pliers to hold 2-3 mm bead, and use a freshly solvent cleaned and sanded single edged razor to cut bead in half
Fiber/hair: Tape fiber down, use a clean single edge razor to cut fiber
Wafer: Scribe 1-2 mm line at edge, and then cleave using pressure from a scribe on the line, or professional glass cleavers
Lump: Mark outside with black or blue Sharpie pen place in clean plastic bag, place bag on a metal sheet, hit with hammer
Glass sheet: If sheet is 1-3 mm thick, scribe a line from edge to edge, and use glass cleavers to cleave the sheet
Natural mineral: Mark outside with black or blue Sharpie pen. Then place sample in clean plastic bag, place bag on a metal sheet, hit with hammer
Metal sheet: Scrape surface with clean, single edge razor blade, or scrape surface with a carbide or diamond tip. Ion etch after sample is inside analysis chamber. Be careful of Preferential Sputtering loss of one element.
Ceramic sheet: If sheet is 1-3 mm thick, scribe a line from edge to edge, and use glass cleavers to break the sheet. Alternatively, if the sheet is >5 mm thick, mark outside with black or blue Sharpie pen, place in clean plastic bag, place bag on a metal sheet, hit with hammer
Single Crystal: Mark corners and edges with Sharpie pen. Trap crystal (5x10mm 1 mm thick). Place single edge razor on edge. Tap with small hammer to cleave crystal

 



Sample Preparation Guide – listed in The PHI Handbook on XPS

This set of sample preparation guides provides an excellent brief set of instructions on preparing various types and shapes of sample and materials.

Click Here.



Preparation of "Native Oxide" Samples – used by The XPS Library for this Database

The samples known as "Native Oxides" are, in general, native oxides that formed in the lab air over many months time. These "Native Oxides" provide valuable information about the surface chemistry and the auto-oxidation of various metals.  These native oxides were analyzed as received without any treatment of any kind. All of these samples had been stored in a set of open-top drawers which were not air-tight and so the samples were exposed to the normal atmosphere of a laboratory for many months or years.

Most native oxides are 1-6 nm thick, and nearly all native oxides are less than 9 nm thick, but a there are a few of the native oxides were more than 10 nm thick due to the reactive nature of the metal (eg Mg, V, Pb).  These "thick" native oxides were too thick because we wanted to have an XPS signal from the underlying pure metal at the same time as have a signal from the native oxide.  The pure metal serves as a reference BE and may allow use to measure useful chemical shifts between the metal and the native oxide, which is often the most thermodynamically stable oxide of that metal.

To have useful spectra the "thick" (>10 nm) native oxides were scraped clean with a razor or a clean knife edge and then exposed to the normal atmosphere of the laboratory for a time period between 5 minutes and several days.  This scraping was done because the naturally formed native oxide or carbonate film was thick enough to hide the pure metal signal when the samples were analyzed by XPS. This method produces "freshly" formed native oxides which have probably not reached a thermodynamically stable state.

In the production of some spectra no attempt to produce a pure, clean surface, but some effort was made to produce surfaces with a minimum amount of natural surface contamination if needed. When ion etching was used to clean a material that contained more than one element, then ion etching was done with conditions that should minimize preferential sputtering.

A special experiment was performed on pure metals that were freshly ion etched to remove all of the native oxide on the pure metal. All of the freshly exposed pure metal surfaces were in a reactive state.  The reactivity of these fresh surfaces were measure by using the depth profile software routine with the ion gun turned OFF and the argon gas turned OFF so that the Argon ion beam was not active.  Immediately after turning off the argon ion beam, the depth profile routine was started.  Spectra were collected overnight for the metal signal, the O (1s) signal, and the C (1s) signal.  The delay time between data collection cycles was roughly 20 minutes during which the surface reacted with the gases that are residual in a cryo-pumped vacuum. In some cases, carbides and oxides progressively formed during the overnight run, and is other cases the surface collected only carbon without forming oxides or carbides.



Preparation of "Powdered" Samples – produced by The XPS Library for this Database

Fine-grained powdered samples were either pressed:

  • into a 3 mm diameter pellet using a mechanical KBr pellet hand-press (from Aldrich) or
  • pressed onto the surface of the sample stage by using a freshly cleaned spatula. Mild pressure was applied while sliding the spatula to the edge of the stage trying to make a smooth surface

Until analyzed, all powdered samples were kept stored in their original glass or plastic containers, which were packaged inside of plastic-lined aluminum bags. Just prior to XPS analysis, each bottle was opened in the normal air of the room where the XPS system was kept, and a small 50-100 mg portion of the sample was removed via a clean nichrome spatula and placed in the compression chamber of a hand-operated, stainless steel "KBr" pellet press. All finely powdered samples were compressed without any chemical treatments, which, if done, may have introduced unusual contamination or produced some change in the samples. The resulting pellets varied in thickness from 0.3 – 0.8 mm.

To avoid iron and /or chromium contamination transferred from the anvil, a thin sheet of paper was placed over the powder while it was in the compression chamber. Any powders, which were clumped together, were very gently ground into a loose powder just prior to compression. To avoid unnecessary heat-induced oxidation, those samples which were hard and granular were very gently ground into a fine powder in a agate marble mortar and pestle. As soon as each sample was removed from the compression chamber, it was mounted onto a small blob of silver (Ag°) paint sitting on a small aluminum block or a 5 mm wide round brass boat which was 1.3 mm in height.

Silver paint was used to trap black, conductive oxides inside of a small brass boat so that true conductors could produce true electron binding energies for those oxides that were indeed conductive. In general, each oxide was exposed to room air for <15 min.

Benefits of Pressing Powders into Pellets – produced by The XPS Library for this Database

A comparison of the electron count rates produced by using two different powder mounting methods revealed that a hard, smooth hand-pressed pellet produces 2-4 times higher electron count rates than a powdered sample dropped and loosely pressed onto double-sided tape or Indium foil.

By pressing the finely powdered oxides into hard smooth pellets, it was also found the surface charging behavior of these glossy or semi-glossy samples was very easy to control.  In general, we used the mesh-screen electron flood-gun combination with the flood gun set to 4-6 eV acceleration energy and approximately 0.5 mA filament current.

Problems Caused by Pressing Samples into Pellets – produced by The XPS Library for this Database

By pressing the finely powdered oxides into pellets, the surface of the resulting samples were usually smooth enough to appear glossy or semi-glossy, but some samples had iron or chromium contamination which indicated that the sample had undergone a pressure induced transfer of iron or chromium oxides from the stainless steel anvil. Very strong hand pressure caused some oxides to react with the stainless steel anvil, but "medium" hand pressure usually did not produce undesired iron and chromium contamination. All analyses that showed any unexpected contamination were repeated. Other forms of accidental contamination (chlorine or previously analyzed oxides) were caused by insufficient cleaning of the stainless steel anvil, which had been cleaned with a metal polishing solution (Pikal) and rinsed with distilled water and isopropanol. All analyses that showed any unexpected contamination were repeated.

Solution to Pressure Induced Contamination of Pellets

Experiments on ways to avoid the pressure-induced iron or chromium contamination, produced pellets with semi-smooth non-glossy surfaces which required more effort to produce good charge control.

The non-glossy surfaces of loose powders gave electron count rates that were about 10-50% lower than the hand pressed glossy or semi-glossy surfaces. As a result, we learned that smooth surfaces, which appear glossy or semi-glossy, greatly simplify efforts to control surface charging under the charge-control mesh-screen and also enhance the electron count rate by 10-50% more than a pellet that has a non-glossy, semi-rough appearance.

Extensive experiments on different methods to avoid contamination of the pellets revealed that contamination is minimized or avoided by using freshly cleaned aluminum foil as a "buffer" between the oxide powders and the metals in the steel anvil components. The aluminum foil, which is sold as a kitchen wrap material, is cleaned with 100% isopropanol (isopropyl alcohol) just prior to use. The foil is cut to a size that is readily useful with the pellet press device after it is cleaned. Alternately, we have also used a type of "glycine" paper which is commonly used to as a paper to hold powders when weighing a powdered sample. This "weighing" paper is common in many chemical laboratories and can be substituted for the aluminum foil whenever the pressing results with the aluminum foil produce undesired binding results. The glycine paper method sometimes introduces very small amounts of contaminants which produce a N (1s) and C (1s) signals. The amount of these contaminants is much smaller than the amount of contaminants that occur by simply pressing the powder without any sort of paper or aluminum foil buffers.



XPS Sample Preparation by PHI

in PHI Handbook on XPS
by Ulvac-Phi (Physical Electronics, PHI)

Preparing and Mounting Samples

For the majority of XPS applications, sample preparation and mounting are not critical. Typically, the sample is mechanically attached to the specimen mount, and analysis is begun with the sample in the as-received condition. Vital information is often hiding in the as-received surface so it can be vital to analyze the surface as-received.  Additional sample preparation is discouraged because any preparation might modify the surface composition. For those samples where special preparation or mounting cannot be avoided, the following techniques are recommended.

1. Removing Volatile Material
Ordinarily, materials known to retain solvents or gases are dried in a separate small vacuum chamber before analysis. In exceptional cases, when the volatile layer is of interest, the sample may be cooled for analysis. The cooling must be to a sufficiently low temperature to guarantee that the volatile element is not warmed to evaporation by any heat load that the analysis conditions may impart. Removal of unwanted volatile materials is usually accomplished by long-term pumping in a separate vacuum system or by washing with a suitable solvent. If you rinse a surface with a volatile solvent, then use freshly distilled solvent to avoid contaminating the surface with high boiling point impurities hiding in the solvent. Choice of the solvent can be critical. Hexane or other light hydrocarbon solvents are probably least likely to alter the surface, providing the solvent properties are satisfactory. Samples may also be washed efficiently in a Soxhlet extractor using a suitable solvent.

2. Removing Nonvolatile Organic Contaminants
When the nature of an organic contaminant is not of interest or when a contaminant obscures underlying material that is of interest, the contaminant may be removed with appropriate organic solvents. As with volatile materials, the choice of solvent can be critical.

3. Ion Sputtering – Ion Etching
Ion sputter-etching or other erosion techniques, such as the use of an oxygen plasma on organic materials, may be used to remove surface contaminants. This technique is particularly useful when removing adventitious hydrocarbons from the sample or when the native oxides, formed by exposure to the atmosphere, are not of interest. Argon ion etching is commonly used to obtain information on composition as a function of the exposure time to ion etching. Calibration of the sputter rates can be used to convert sputter time to information on depth into the specimen. Because sputtering may cause changes in the surface chemistry, identification of the changes in chemical stales with depth may not reflect the true composition.

4. Abrasion
Abrasion of a surface can be done without significant contamination by using a laboratory wipe or a cork. To remove more material, use fine sandpaper, a file or a single edged razor blade. This may cause local heating, and reaction with laboratory air may occur (e.g., oxidation in air or formation of nitrides in nitrogen). To prevent oxidation of more active materials, perform abrasion in an inert atmosphere such as a glove bag or glove box or while immersing the sample in an appropriate volatile organic solvent. The abraded material should then be transferred to the load-lock with immediate pump-down, or if possible load the sample into a high vacuum transfer box in a sealed vessel to preserve the clean surface.

5. Fracturing and Scraping inside High Vacuum
With proper equipment many materials can be fractured or scraped within the test chamber under UHV conditions. While this minimizes contamination by reaction with atmospheric gases, attention must be given to unexpected results which might occur. Fracturing might occur along the grain boundaries which may not be representative of the bulk material. Scraping can cover hard material with soft material whcn the sample is multiphase.

6. Grinding Grains into Powder
If spectra that are more characteristic of the bulk composition are desired, then samples may be ground to a powder in a mortar or if possible fractured in air (e.g. single crystal of NaCl). Protection of the fresh surfaces from the atmosphere is required so use a gently flow or Argon or Nitrogen gas to minimize reaction with air. When grinding samples, localized high temperatures can be produced, so grinding should be done slowly to minimize heat-induced chemical changes at the newly created surfaces. The mortar and pestle should be well cleaned before reuse.

7. Mounting Powders for Analysis
There are a number of methods which can be used to mount powders for analysis. Perhaps the most widely used method is dusting the powder onto a polymer-based adhesive tape with a camel-hair brush. The powder can be dusted across the surface carefully and lightly, with no wiping strokes.

Some researchers shun double-sided adhesive tape for UHV work, but many have successfully used certain types of tape in the 9e(-10) Torr range.

Alternative methods for mounting powders include pressing (he powder into indium or other soft foils, supporting the powder on a metallic mesh, pressing the powder into pellets or simply depositing the powder by gravity.

With the foil method, the powder is pressed between two pieces of pure foil. The pieces arc then separated, and one of them is mounted for analysis. Success with this technique has been varied. Sometimes regions of bare foil remain exposed and, if the sample is an insulator, regions of the powder might charge differently.

Differential charging can also be a problem when a metallic mesh is used to support the powder. If a press is used to form the powder into a pellet of workable dimensions, a press with hard and extremely clean working surfaces should be used. Protecting the surface of the pellet by inserting either fresh Aluminum foil, weighing paper or wax paper.

Gravity can effectively hold some materials in place, particularly if a shallow well or depression is cut in the surface of a 1-2 mm thick of Aluminum metal.

Allowing a liquid suspension of the powder to dry on the specimen holder is also an effective way of mounting a powdered sample on a sample mount.


8.  Sample Heights and Instrument Geometries must be Considered

The incident angle of the X-ray beam can be as low as 30 degrees relative to the plane of the sample so be sure that other samples on the sample mount will not block the X-ray beam or the flood gun beam or the Ar+ ion beam if needed.  If you can use a rotating sample stage, then it can help avoid blockage of one of the beams.



Sample Mounting Details

Sample Mounting – used by The XPS Library for this Database

In general, the "as-received" sample is mechanically trapped or attached onto the sample mount, sample stage, or inside a short sample cup. Additional sample preparation is discouraged because any preparation might modify the surface composition. For those samples where special preparation or mounting cannot be avoided, the following techniques are recommended. The methods used to mechanically trap solid samples involved the use of a spring-clip, double sided non-conductive tape, Indium foil, metal screws with large washers, or silver (Ag) paint (allowed to dry in lab air).

Because we wanted spectra with strong signals and high energy resolution, many samples were oriented to a 90 degree electron take-off-angle which is normal to plane of the sample mount.  To keep samples attached to the tilted sample holder which gave the strongest signal, we used double-sided adhesive tape, clips, screws and large washers, and silver (Ag) paint. In this orientation, we found that the electron flood gun in the S-Probe XPS instrument was still effective.

Sample Heights and Instrument Geometries – used by The XPS Library for this Database

Because it is possible to mount several samples at the same time we always checked the sample heights and geometries of adjacent samples to be sure that none of the samples block the X-ray beam or the flood gun beam or the Ar+ ion beam for each of the other samples.  By using a rotating sample stage, we were able to avoid blockage of any of the input beams.

Benefit of Tilting Sample to Produce an Elongated X-ray Analysis Area

A comparison of the electron count rates produced by using different electron take-off-angles revealed that a grazing X-ray beam produces 2-4 times higher electron count rates than the normal flat angle of the sample stage. This is due to an elongation of the X-ray beam shape which produces more photoelectrons that can be collected by the larger electron collection lens (30 deg) of the SSI S-Probe.  Most XPS instruments had much smaller electron collection lens angles (7-15 deg) which improved angle-resolved XPS.

A comparison of the electron count rates produced by using two different powder mounting methods also revealed that a hard, smooth hand-pressed pellet produces 2-4 times higher electron count rates than a powdered sample dropped and loosely pressed onto double-sided tape or Indium foil.

A test using a clean pure silver coated silicon wafer or polymer film was very useful to learn the limits and to optimize the electron count rates obtained from the silver surface at various tilt angles.

Using "Charge-Control Mesh-Screen" to produce spectra for The XPS Library and for this Database

On the X-Probe and S-Probe XPS instruments, charge compensation of insulating materials was handled by using the patented SSI mesh-screen together with a low voltage flood gun of electrons which used an acceleration voltage that was adjusted to 3-4 eV for optimum results. The mesh-screen device uses a 90% transmission electro-formed mesh made of nickel metal that is supported above the surface of the sample by mounting the mesh on a conductive metal frame that is grounded to the sample mount. To achieve good charge compensation the mesh-screen is positioned so that the distance between the mesh and the surface of the sample is between 0.5 – 1.0 mm. When the distance between the mesh-screen and the surface of the sample is greater than 1.2 mm, the usefulness of the mesh screen flood gun system was normally null.

The mesh-screen is understood to function as an electron cut-off lens with some tendency to allow incoming flood gun electrons to focus onto the area being irradiated with monochromatic X-ray beam. This occurs because the X-ray beam does not have a uniform flux density over the area of the beam. In effect, the mesh-screen produces a nearly uniform electric potential at the surface of the sample and allows incoming flood-gun electrons to pass through whenever they are needed (on demand).

The mesh-screen was used on every insulating material except for a few materials that were analyzed before the flood gun mesh-screen method was developed.

On the XPS instrument that uses a magnetic lens to focus the photo-electrons, the mesh screen was found to bend upwards due to the magnetic field.  Even so, charge control was still found to be better than without the mesh screen. To get the best charge control on this instrument, we had to turn off the voltage of input lens #1 which then allowed proper changing of the voltage of the flood gun.

On the Thermo K-alpha XPS instrument, the dual beam of low voltage argon ions and low voltage electrons were deflected by the mesh screen causing poor charge control results.  One the Ar+ ion beam was turned off, the charge-control mesh-screen was then very effective to control sample charging on the Thermo K-alpha XPS.



XPS Sample Preparation by NESAC

by NESAC/BIO at the University of Washington

https://www.nb.uw.edu/content/esca-sample-preparation

Maintaining a Clean Sample Surface:

Gloves: Use only polyethylene gloves. Other gloves may contain silicones that can contaminate the surface. Clean: Use only clean utensils (tweezers, etc) when handling samples. Make sure theses have been cleaned to remove hydrocarbon and silicone contaminants and dedicate their use to ESCA samples only. Keep your samples in a "clean" environment. A laminar flow hood or a clean laboratory environment is strongly suggested.

Common Contaminants: Common surface contaminants include:

Hydrocarbon: Pump oil, greasy finger prints, dirty desiccators, dirty solvents.
Silicones: Non-approved gloves, glass-fitting-grease, dirty desiccators, hair, hand lotion.
Salts: Sodium, chlorine, potassium, can be introduced through improper rinsing or exposure to water that has not been properly purified.
Useful Analysis Requires Good Planning:

Controls: Always include control samples with the sample of interest. A control could include a sample of just the underlying substrate and/or a sample of the underlying substrate exposed to solvent used for the surface modification without the actual modifying agent.  Duplicates: It is best, if possible, to send duplicate samples, even if only one is to be analyzed. Sometimes samples are damaged in transport or, on a very rare occasion, can be damaged while loading for analysis.

Include With Samples:

Samples Summary: Include a sheet with a list of the specific samples that are included and what is on them.
Structure: Proper ESCA analysis requires the structure of the surface bound species and knowledge of the underlying substrate. Without this information accurate analysis of the ESCA data is difficult.
Figure 1: ESCA sample holder (side and top views) showing the mounting of 1cm x 1cm conductive samples. The sample holder is ~5cm in diameter and can hold samples slightly larger than the holder size.

Sample Shipping

Packaging: We suggest shipping samples in tissue culture polystyrene (TCPS) dishes sealed with parafilm. To prevent the samples from rattling around during transport, we use a small amount of double sided tape to secure the back of the samples to the bottom of the TCPS dish. It is very important to only stick a small corner of the sample to the tape. If the center of the samples is stuck to the tape or there is tape under the entire sample it is nearly impossible to remove the samples without damaging them. Please try sticking down a "test" sample and be sure it can easily be removed before packaging other samples. We have shipped many samples without incident and have discovered that only taping a small part of the corner is required to secure the sample.

Know Your Contact: Be sure that you are shipping your samples to the correct address and contact person. Our shipping address is NOT the same as the usual mailing address. The shipping address will be given out once samples have been approved for analysis. Also, inform your contact that the samples are being shipped to ensure that they will look out for your samples, and inform you if they do not arrive.


Sample Physical Requirements

Sample Size: Our ESCA systems can accommodate a wide variety of sizes and shapes in samples. We have also been known to "cut" samples down to size if necessary. Please inform your NESAC/BIO contact of the shape and size of the sample and we will suggest options.

Outgassing: One of the main limitations for ESCA samples is their outgassing properties. ESCA is a technique which MUST be preformed in a vacuum chamber with pressures of ~5×10-9 Torr. .Samples such as polymerized tetraglyme, "wet" silicones, or any "spongy" type sample which soaks up water will have some trouble pumping down to the appropriate pressure. However, there are methods we can use to analyze these samples, such as reducing the size of the sample. If your sample may present a problem, please notify your contact person and arrangements will be made for special analysis.

Figure 2: Only a small piece of tape at the sample corner should be sufficient to fix your samples in place for shipping.
Good sample preparation methods are vital in surface science as the signals emanating from surface contamination can overwhelm the signals from the sample.  Gloves and clean tweezers must be used and any glassware must be thoroughly cleaned before use. Tweezers should be cleaned regularly by sonication in isopropyl alcohol (IPA).

Samples can be stored or transported in clean poly(styrene) petri dishes and well plates, or clean glass vials. Avoid ALL other plastic containers, including plastic sample bags. A good alternative to plastic or glass containers is new, clean aluminium foil.  An argon etch is available to XPS users for in situ sample cleaning. This method is recommended for the removal of thin oxide layers however it will reduce your available analysis time so it should be avoided where possible.

Typical samples for XPS are 0.5 – 1 cm2 in size and up to 4 mm thick. Thicker samples may also be accommodated – please contact us for details.

Magnetic samples:
The Axis Ultra and Thermo XL systems use magnetic immersion lenses to focus the photoelectrons emitted from the surface towards the detector. Magnetic samples can still be analyzed, but the experimental set up for these samples is slightly different. If you have magnetic samples that you would like to submit for XPS analysis, then please contact us prior to booking the instrument to discuss the available options.

Powders:
There are a few universally accepted methods of preparing powdered samples for XPS. Of these the favored method is to press the powder into clean, high purity indium foil. Alternatively, the powder may be dissolved in a suitable solvent and then drop cast onto the surface of a clean silicon wafer. Finally, powders that can not be prepared by either of the above methods can be either sprinkled onto the surface of sticky carbon tape or pressed into a tablet for analysis. Please discuss these latter two options with the experimental officer prior to booking the instrument.



Sources of Samples

Sources of Elements and Chemical Compounds used by The XPS Library for this Database

The pure element samples were obtained from various sources without any specific information about sample purity so pure element samples must be assumed to be pure at the 99%+ level. The "halide" salts used to produce spectra from gaseous or highly reactive elements were also obtained from various sources. These halide samples were obtained as crystalline "windows" which are normally used in Infrared spectroscopy and have purities at the 99% level. The Boron Nitride (BN) sample was a white ceramic electrical standoff which was fractured in air. The copper foil material, which was always used to determine reference energies, were obtained as 99% pure foil which was designed as a multiple purpose foil for use around the home. The gold ingot material, which was also used to determine reference energies was obtained as a 99.999% pure sample from Aldrich Chem. Co.

Source of Polymers used by The XPS Library for this Database

A special kit (#205) of the 100 polymer materials was obtained from Scientific Polymer Products, Inc. which is located at 6265 Dean Parkway, Ontario, New York, USA 13519 (Tel 716-265-0413).  Thin films of Kynar, and related fluorinated polymers were obtained from private suppliers.

Source of Alloys used by The XPS Library for this Database

A special kit of 54 metallic alloys was obtained from the Metal Samples Co., which is located at Route #1, Box 152, Munford, Alabama, USA, 36268 (Tel 205-358-4202). This kit includes a materials analysis report on each alloy in weight percent. The National Research Institute for Metals (NRIM) in Tsukuba, Japan has provided a series of various binary alloys made of AuCu and CoNi alloys.

Sources of Semi-Conductor Materials used by The XPS Library for this Database

Over the course of many years, many people in the Japanese semi-conductor business have given samples of various semi-conductor materials in crystalline wafer form. Various samples were donated by the Oki Electric Company, Mitsubishi Materials, Canon, and various universities. The source of each material is included with the individual sample descriptions whenever that information was provided.

Sources of Commercially Pure Binary Oxide Samples used by The XPS Library for this Database

Most of the commercially pure binary oxides were purchased from the Aldrich Chem. Co.. The packages from the Aldrich Chemical Co. included an "Analytical Information" sheet which described an ICP or AA analysis summary, a production lot number, the Aldrich product number, sample purity number (e.g. 99+%), sample appearance (color and physical form), date of chemical analysis, formula weight and a label on the bottle that reports the melting point, toxicity, Chemical Abstracts registry number and density. The samples from Aldrich were generally quite pure at the surface. Other oxide samples were obtained from either Cerac Inc. (USA) or Rare Metallics Co., Ltd. (Japan). The packages from Cerac Inc. included a "Certificate of Analysis" with an ICP or AA analysis summary, a production lot number, a product number, purity (e.g. 99+%), and mesh size. The packages from Rare Metallics Co. did not include analytical data reports, but instead had stock numbers and a purity statement. Two samples (i.e. SiO2 natural crystal and Al2O3 fused plate) were obtained from in-house sources and do not have any purity reports.  Recent purchases of binary and ternary oxides, sulfides and sulfates was from the ChemCraft Co located in Russia.

Sources of Commercially Pure Rare Earth Materials used by The XPS Library for this Database

The rare earths were purchased from Aldrich Chemical Co, Rare Metallics Company (in Japan) and ChemCraft Co. (in Russia).

Source of Pellet Press Equipment used by The XPS Library for this Database

"Qwik Handi-Press" from Barnes Analytical Division, Spectra-Tech, Inc.652 Glenbrook Road, Stamford, Connecticut, 06906 (FAX 203-357-0609) Kit: Part # 0016-111 to 0016-121 contains 1,3, and 7 mm die sets. Originally purchased through Aldrich Chem. Co. in 1989.



Sample Sizes and Sample Mounts for XPS



Sample Sizes and Shapes



Abbreviations Used

Due to the limited space provided to describe each sample in each electronic data-file, it was necessary to use various abbreviations. The abbreviations are:

scr = screen used for charge compensation
scrn = screen used for charge compensation
TOA = take-off-angle for the electrons
Aldr = Aldrich Chemical Co.
RMC = Rare Metallics Co.
SPP = Scientific Polymer Products Co. MS Co. = Metal Samples Company
FG = flood gun,
mesh = mesh-screen used for charge control,
1 mm=1 mm height used for the mesh-screen,
semi-con = semi-conductive behavior
conduc, = conductive behavior
Tech = technical grade purity,
pellet = sample pressed into pellet form by pellet press used to make Infrared KBr pellets,
plt = pellet
pel = pellet


Common
Formula
First Element
Name
Chemical Group Name Full Name Physical
State
Last
Treatment
Mineral
Name
Primary Element  Atomic Number (Z#) Database
Index #
Ag native oxide silver native oxide silver native oxide film as received Ag 47 268
Ag2S silver sulfide silver sulfide natural crystal cleaved Acanthite S 16 99
Ag2SO4 silver sulfate silver sulfate powder pressed S 16 100
AgF2 silver fluoride silver difluoride powder pressed Ag 47 270
Ago silver element elemental silver flat piece ion etched Ag 47 267
AgO silver oxide silver (II) oxide powder pressed Ag 47 269
AgTe silver telluride silver telluride single crystal cleaved Te 52 293
Al native oxide aluminum native oxide aluminum native oxide film as received Al 13 82
Al(OH)3 aluminum hydroxide aluminum hydroxide powder pressed O 8 50
Al2O3 aluminum oxide aluminum oxide amorphous fractured Sapphire O 8 49
Al2O3 aluminum oxide aluminum oxide amorphous solid fractured Al 13 83
AlF3 aluminum fluoride aluminum fluoride powder pressed Al 13 85
AlN aluminum nitride aluminum nitride coating as received N 7 32
Al aluminum element elemental aluminum solid ion etched Al 13 81
AlO(OH) aluminum hydroxide aluminum oxy hydroxide natural crystal cleaved Diaspore O 8 42
AlO(OH) aluminum hydroxide aluminum oxy hydroxide natural crystal cleaved Diaspore Al 13 84
Ar in Aluminum argon implant Ar in Aluminum implant implant Ar 18 123
Ar in Beryllium argon implant Ar in Beryllium implant implant Ar 18 125
Ar in Boron argon implant Ar in Boron implant implant Ar 18 124
Ar in Carbon argon implant Ar in Carbon implant implant Ar 18 126
Ar in Chromium argon implant Ar in Chromium implant implant Ar 18 127
Ar in HOPG argon implant Ar in HOPG implant implant Ar 18 133
Ar in Manganese argon implant Ar in Manganese implant implant Ar 18 128
Ar in Scandium argon implant Ar in Scandium implant implant Ar 18 129
Ar in Silicon argon implant Ar in Silicon implant implant Ar 18 130
Ar in Titanium argon implant Ar in Titanium implant implant Ar 18 131
Ar in Vanadium argon implant Ar in Vanadium implant implant Ar 18 132
As native oxide arsenic native oxide arsenic native oxide film as received As 33 208
As2O3 arsenic oxide arsenic trioxide powder pressed Arsenolite As 33 209
As2O5 arsenic oxide arsenic pentoxide powder pressed As 33 210
As2S3 arsenic sulfide arsenic sulfide lump fractured Realgar As 33 211
Aso arsenic element elemental arsenic lump ion etched As 33 207
Au native oxide gold native oxide gold native oxide film as received Au 79 406
Au2O gold oxide gold (I) oxide powder pressed Au 79 408
Au2O3 gold oxide gold oxide powder pressed Au 79 407
Auo gold element elemental gold flat piece ion etched Au 79 405
B2O3 boron oxide boron oxide crystallite crushed B 5 18
BaCO3 barium carbonate barium carbonate powder pressed Witherite Ba 56 310
BaF2 barium fluoride barium fluoride powder pressed Ba 56 312
Bao barium element elemental barium lump ion etched Ba 56 308
BaO barium oxide barium oxide powder pressed Ba 56 309
BaSO4 barium sulfate barium sulfate natural crystal cleaved Baryte Ba 56 311
Be native oxide beryllium native oxide beryllium native oxide film as received Be 4 15
BeF2 beryllium fluoride beryllium fluoride powder pressed Be 4 16
BeF2 beryllium fluoride beryllium fluoride powder pressed F 9 65
Beo beryllium element elemental beryllium solid ion etched Be 4 13
BeO beryllium oxide beryllium oxide powder pressed Be 4 14
Bi native oxide bismuth native oxide bismuth native oxide film as received Bi 83 422
Bi2O3 bismuth oxide bismuth  oxide powder pressed Bi 83 423
BiF3 bismuth fluoride bismuth fluoride powder pressed Bi 83 424
Bio bismuth element elemental bismuth flat piece ion etched Bi 83 421
BN boron nitride boron nitride solid cleaved B 5 19
Bo boron element elemental boron solid ion etched B 5 17
CaBr2 calcium bromide calcium bromide single crystal cleaved Ca 20 147
CaCl2 calcium chloride calcium chloride single crystal cleaved Ca 20 146
CaCO3 calcium carbonate calcium carbonate natural crystal cleaved Calcite C 6 29
CaCO3 calcium carbonate calcium carbonate single crystal cleaved Calcite Ca 20 149
CaF2 calcium fluoride calcium fluoride natural crystal cleaved Fluorite F 9 63
CaF2 calcium fluoride calcium fluoride single crystal cleaved Fluorite Ca 20 145
CaI2 calcium iodide calcium iodide single crystal cleaved Ca 20 148
CaMg(CO3)2 calcium carbonate calcium magnesium carbonate single crystal cleaved Dolomite Ca 20 150
Cao calcium element elemental calcium lump ion etched Ca 20 144
CaSO4 calcium sulfate calcium sulfate natural crystal cleaved Gypsum Ca 20 151
CaTiO3 calcium titanate calcium titanate single crystal cleaved Perovskite Ca 20 152
Cd native oxide cadmium native oxide cadmium native oxide film as received Cd 48 272
Cdo cadmium element elemental cadmium flat piece ion etched Cd 48 271
CdO cadmium oxide cadmium oxide powder pressed Cd 48 273
CdS cadmium sulfide cadmium sulfide single crystal cleaved S 16 101
CdS cadmium sulfide cadmium sulfide single crystal cleaved Cd 48 274
CdSO4 cadmium sulfate cadmium sulfate powder pressed S 16 102
CdTe cadmium telluride cadmium telluride single crystal cleaved Te 52 291
Ce2(SO4)3 cerium sulfate cerium sulfate powder pressed Ce 58 324
Ce2CO3 – nH2O cerium carbonate cerium carbonate powder pressed Ce 58 321
CeF3 cerium fluoride cerium tri-fluoride crystallite cleaved Ce 58 323
CeF4 cerium fluoride cerium tetra-fluoride powder pressed Ce 58 322
Ceo cerium element elemental cerium flat piece ion etched Ce 58 319
CeO2 cerium oxide cerium dioxide powder pressed Ce 58 320
CF2CF2 carbon polymer Teflon, PTFE film razor cut F 9 66
CF2CH2 carbon polymer Kynar film hexane wipe F 9 67
(CH3)2SiO silicon polymer poly-dimethyl siloxane oil smeared O 8 62
(CH3)2SiO silicon polymer poly-dimethyl siloxane oil smeared Si 14 90
CH carbon carbon adventitious carbon film as received C 6 26
Co carbon carbon highly oriented pyrolytic graphite single crystal peeled Graphite C 6 21
Co carbon carbon diamond carbon natural crystal as received Diamond C 6 22
Co carbon carbon graphene natural peeled Graphite C 6 23
Co native oxide cobalt native oxide cobalt native oxide film as received Co 27 182
CoF2 cobalt fluoride cobalt difluoride powder pressed Co 27 184
Coo cobalt element elemental cobalt flat piece ion etched Co 27 181
CoO cobalt oxide cobalt monoxide single crystal cleaved Co 27 183
COx carbon oxide graphene oxide powder pressed C 6 24
COx carbon oxide reduced graphene oxide powder pressed C 6 25
Cr native oxide chromium native oxide chromium native oxide film as received Cr 24 168
Cr2O3 chromium oxide chromium oxide single crystal cleaved Cr 24 169
CrC chromium carbide chromium carbide film as received Cr 24 167
CrF3 chromium fluoride chromium fluoride powder pressed Cr 24 170
Cro chromium element elemental chromium flat piece ion etched Cr 24 166
Cs2CO3 cesium carbonate cesium carbonate powder pressed Cs 55 306
Cs2SO4 cesium sulfate cesium sulfate crystallite crushed Cs 55 307
CsBr cesium bromide cesium bromide crystallite crushed Br 35 222
CsBr cesium bromide cesium bromide crystallite crushed Cs 55 304
CsCl cesium chloride cesium chloride crystallite crushed Cs 55 303
CsF cesium fluoride cesium fluoride powder pressed Cs 55 301
CsHCO3 cesium bi-carbonate cesium bi-carbonate powder pressed Cs 55 305
CsI cesium iodide cesium iodide single crystal scraped I 53 298
CsI cesium iodide cesium iodide single crystal scraped Cs 55 302
Cso cesium element elemental cesium film ion etched Cs 55 300
Cu native oxide copper native oxide copper native oxide film as received Cu 29 190
Cu(NO3)2 copper nitrate copper nitrate powder pressed N 7 38
Cu(NO3)2 copper nitrate copper nitrate powder pressed O 8 58
Cu2O copper oxide cuprous oxide natural crystal cleaved Cuprite O 8 45
Cu2O copper oxide cuprous oxide single crystal cleaved Cuprite Cu 29 191
CuCl2 copper chloride cupric chloride powder pressed Cl 17 121
CuCN copper cyanide copper cyanide powder pressed N 7 39
CuF2 copper fluoride cupric fluoride powder pressed Cu 29 193
CuO copper oxide cupric oxide powder pressed Tenorite O 8 46
Cuo copper element elemental copper flat piece ion etched Cu 29 189
CuO copper oxide cupric oxide powder pressed Tenorite Cu 29 192
Dy native oxide dysprosium native oxide dysprosium native oxide film as received Dy 66 351
Dy2(SO4)3 dysprosium sulfate dysprosium sulfate powder pressed Dy 66 353
Dy2O3 dysprosium oxide dysprosium oxide powder pressed Dy 66 352
Dyo dysprosium element elemental dysprosium flat piece ion etched Dy 66 350
Er native oxide erbium native oxide erbium native oxide film as received Er 68 359
Er2O3 erbium oxide erbium oxide powder pressed Er 68 360
ErF3 erbium fluoride erbium fluoride powder pressed Er 68 361
Ero erbium element elemental erbium flat piece ion etched Er 68 358
Eu native oxide europium native oxide europium native oxide film as received Eu 63 337
Eu2(SO4)3 europium sulfate europium sulfate powder pressed Eu 63 340
Eu2O3 europium oxide europium oxide powder pressed Eu 63 338
EuF3 europium fluoride europium fluoride powder pressed Eu 63 339
Euo europium element elemental europium flat piece ion etched Eu 63 336
Fe native oxide iron native oxide iron native oxide film as received Fe 26 178
Fe2O3 iron oxide iron oxide natural crystal cleaved Hematite O 8 43
Fe2O3 iron oxide iron oxide single crystal cleaved Hematite Fe 26 179
FeF3 iron fluoride iron trifluoride powder pressed Fe 26 180
FeN iron nitride iron nitride lump ion etched N 7 33
Fe iron element elemental iron flat piece ion etched Fe 26 177
FeO(OH) iron hydroxide iron oxy hydroxide natural crystal cleaved Goethite O 8 44
FeS2 iron sulfide iron sulfide natural crystal cleaved Pyrite S 16 103
FeSO4 iron sulfate iron sulfate powder pressed S 16 104
Ga native oxide gallium native oxide gallium native oxde bead as received Ga 31 199
Ga2O3 gallium oxide gallium oxide powder pressed Ga 31 200
GaAs gallium arsenide gallium arsenide single crystal cleaved As 33 212
GaF3 gallium fluoride gallium fluoride powder pressed Ga 31 201
GaN gallium nitride gallium nitride single crystal cleaved N 7 34
Gao gallium element elemental gallium bead ion etched Ga 31 198
GaP gallium phosphide gallium phosphide single crystal cleaved P 15 94
Gd native oxide gadolinium native oxide gadolinium native oxide film as received Gd 64 342
Gd2(SO4)3 gadolinium sulfate gadolinium sulfate powder pressed Gd 64 345
Gd2O3 gadolinium oxide gadolinium oxide powder pressed Gd 64 343
GdF3 gadolinium fluoride gadolinium fluoride powder pressed Gd 64 344
Gdo gadolinium element elemental gadolinium flat piece ion etched Gd 64 341
Ge native oxide germaniun native oxide germaniun native oxide film as received Ge 32 203
Ge3N4 germanium nitride germanium nitride powder as received Ge 32 205
Geo germanium element elemental germanium flat piece ion etched Ge 32 202
GeO2 germanium oxide germanium oxide powder pressed Ge 32 204
GeSi germanium silicide germanium silicide flat piece cleaved Ge 32 206
Heo helium element helium gas gas none He 2 2
Hf native oxide hafnium native oxide hafnium native oxide film as received Hf 72 377
HfC hafnium carbide hafnium carbide lump ion etched Hf 72 378
HfF4 hafnium fluoride hafnium fluoride powder pressed Hf 72 380
Hf hafnium element elemental hafnium flat piece ion etched Hf 72 376
HfO2 hafnium oxide hafnium oxide powder pressed Hf 72 379
Hg2SO4 mercury sulfate mercurous sulfate powder pressed O 8 57
Hg2SO4 mercury sulfate mercury sulfate powder pressed S 16 106
HgF2 mercury fluoride mercury fluoride powder pressed Hg 80 412
HgO mercury oxide mercuric oxide powder pressed O 8 56
Hgo mercury element elemental mercury bead ion etched Hg 80 409
HgO mercury oxide mercury oxide powder pressed Hg 80 410
HgS mercury sulfide mercury sulfide natural crystal cleaved Cinnabar S 16 105
HgS mercury sulfide mercury sulfide natural crystal cleaved Cinnabar Hg 80 411
Ho hydrogen element hydrogen gas gas none H 1 1
Ho native oxide holmium native oxide holmium native oxide film as received Ho 67 355
Ho2(SO4)3 holmium sulfate holmium sulfate powder pressed Ho 67 357
Ho2O3 holmium oxide holmium oxide powder pressed Ho 67 356
Hoo holmium element elemental holmium flat piece ion etched Ho 67 354
In native oxide indium native oxide indium native oxide film as received In 49 276
In2O3 indium oxide indium oxide powder pressed In 49 277
InF3 indium fluoride indium fluoride powder pressed In 49 278
Ino indium element elemental indium flat piece ion etched In 49 275
InP indium phosphide indium phosphide single crystal cleaved P 15 93
InP indium phosphide indium phosphide single crystal cleaved In 49 279
Ir native oxide iridium native oxide iridium native oxide film as received Ir 77 398
Iro iridium element elemental iridium flat piece ion etched Ir 77 397
IrO2 iridium oxide iridium oxide powder pressed Ir 77 399
K2CO3 potassium carbonate potassium carbonate powder pressed C 6 27
K2CO3 potassium carbonate potassium carbonate powder pressed O 8 54
K2CO3 potassium carbonate potassium carbonate crystallite crushed K 19 139
K3Fe(CN)6 potassium ferri-cyanide potassium ferri-cyanide single crystal cleaved K 19 143
Kapton carbon imide Kapton film hexane wipe N 7 40
KBr potassium bromide potassium bromide single crystal cleaved K 19 137
KBr potassium bromide potassium bromide single crystal cleaved Br 35 220
KCl potassium chloride potasssium chloride crystallite crushed Cl 17 118
KCl potassium chloride potassium chloride single crystal cleaved K 19 136
KF potassium fluoride potassium fluoride single crystal cleaved K 19 135
KH2PO4 potassium phosphate potassium hydrogen phosphate single crystal cleaved O 8 59
KH2PO4 potassium phosphate potassium hydrogen phosphate single crystal cleaved P 15 95
KHCO3 potassium bi-carbonate potassium bi-carbonate crystallite crushed C 6 28
KHCO3 potassium bi-carbonate potassium bi-carbonate crystallite crushed O 8 55
KHCO3 potassium bi-carbonate potassium bi-carbonate powder pressed K 19 140
KI potassium iodide potassium iodide single crystal cleaved K 19 138
KI potassium iodide potassium iodide single crystal cleaved I 53 295
KMnO4 potassium manganate potassium permanganate single crystal crushed K 19 142
Ko potassium element elemental potassium lump ion etched K 19 134
KO2 potassium oxide potassium super-oxide lump scraped K 19 141
La2(CO3)3 – 6H2O lanthanum carbonate lanthanum carbonate powder pressed La 57 315
La2(SO4)3 lanthanum sulfate lanthanum sulfate powder pressed La 57 317
La2O3 lanthanum oxide lanthanum oxide powder pressed La 57 314
LaB6 lanthanum boride lanthanum hexa-boride single crystal ion etched La 57 318
LaF3 lanthanum fluoride lanthanum fluoride powder pressed La 57 316
Lao lanthanum element elemental lanthanum flat piece ion etched La 57 313
Li2CO3 lithium carbonate lithium carbonate powder pressed Li 3 4
Li2SO4 lithium sulfate lithium sulfate powder pressed Li 3 3
Li2WO4 lithium tungstate lithium tungstate crystallite crushed W 74 390
Li3N lithium nitride lithium nitride powder pressed Li 3 8
Li3N lithium nitride lithium nitride powder pressed N 7 31
LiB3O5 lithium borate lithium metaborate single crystal cleaved Li 3 12
LiBr lithium bromide lithium bromide crystallite crushed Li 3 10
LiBr lithium bromide lithium bromide crystallite crushed Br 35 219
LiCl lithium chloride lithium chloride crystallite crushed Li 3 6
LiCl lithium chloride lithium chloride crystallite crushed Cl 17 117
LiCoMnNiOx lithium oxide powder pressed Li 3 11
LiF lithium fluoride lithium fluoride natural crystal cleaved Li 3 5
LiFePO4 lithium phosphate lithium iron phosphate powder pressed P 15 97
LiI lithium iodide lithium iodide crystallite crushed Li 3 9
LiI lithium iodide lithium iodide bead crushed I 53 294
LiNbO3 lithium niobate lithium niobate single crystal cleaved Li 3 7
LiNbO3 lithium niobate lithium niobate single crystal cleaved Nb 41 251
Lu native oxide lutetium native oxide lutetium native oxide film as received Lu 71 373
Lu2(SO4)3 – 8H2O lutetium sulfate lutetium sulfate powder pressed Lu 71 375
Lu2O3 lutetium oxide lutetium oxide powder pressed Lu 71 374
Luo lutetium element elemental lutetium flat piece ion etched Lu 71 372
Mg native oxide magnesium native oxide magnesium native oxide film as received Mg 12 78
MgCO3 magnesium carbonate magnesium carbonate natural crystal cleaved Magnesite O 8 52
MgF2 magnesium fluoride magnesium fluoride coating as received F 9 64
MgF2 magnesium fluoride magnesium fluoride coating as received Mg 12 80
MgO magnesium oxide magnesium oxide single crystal cleaved Periclase O 8 51
Mgo magnesium element elemental magnesium ribbon ion etched Mg 12 77
MgO magnesium oxide magnesium oxide single crystal cleaved Periclase Mg 12 79
MgSO4 magnesium sulfate magnesium sulfate powder pressed Epsom O 8 53
Mn native oxide manganese native oxide manganese native oxide film as received Mn 25 172
MnC manganese carbide manganese carbide film as received Mn 25 173
MnF2 manganese fluoride manganese difluoride powder pressed Mn 25 175
MnF3 manganese fluoride manganese trifluoride powder pressed Mn 25 176
Mno manganese element elemental manganese flat piece ion etched Mn 25 171
MnO2 manganese oxide manganese dioxide chip cleaved Ramsdellite Mn 25 174
Mo native oxide molybdenum native oxide molybdenum native oxide film as received Mo 42 253
MoC molybdenum carbide molybdenum carbide film as received Mo 42 254
Moo molybdenum element elemental molybdenum flat piece ion etched Mo 42 252
MoO3 molybdenum oxide molybdenum oxide powder pressed Mo 42 255
MoS2 molybdenum sulfide molybdenum sulfide natural crystal peeled Molybdenite S 16 114
MoS2 molybdenum sulfide molybdenum sulfide single crystal peeled Molybdenite Mo 42 256
Na2CO3 sodium carbonate sodium carbonate powder pressed Na 11 74
Na2O sodium oxide sodium oxide lump scraped Na 11 75
Na2Si3O7 sodium silicate sodium meta-silicate solution smeared Si 14 91
Na2SO4 sodium sulfate sodium sulfate powder pressed S 16 112
Na3AlF6 sodium fluoride sodium aluminum hexafluoride natural crystal cleaved Cryolite Na 11 76
NaBF4 sodium borate sodium tetrafluoroborate powder pressed B 5 20
NaBr sodium bromide sodium bromide crystallite crushed Na 11 71
NaBr sodium bromide sodium bromide crystallite crushed Br 35 221
NaCl sodium chloride sodium chloride natural crystal cleaved Halite Na 11 70
NaCl sodium chloride sodium chloride single crystal cleaved Halite Cl 17 119
NaF sodium fluoride sodium fluoride natural crystal cleaved Villiaumite Na 11 69
NaH2PO4 sodium phosphate sodium hydrogen phosphate crystallite crushed P 15 96
NaHCO3 sodium bi-carbonate sodium bi-carbonate crystallite crushed Nahcolite Na 11 73
NaHSO4 sodium sulfate sodium bi-sulfate powder pressed S 16 111
NaI sodium iodide sodium iodide crystallite crushed Na 11 72
NaI sodium iodide sodium iodide crystallite crushed I 53 296
Nao sodium element elemental sodium lump ion etched Na 11 68
Nb native oxide niobium native oxide niobium native oxide film as received Nb 41 248
Nb2O5 niobium oxide niobium pentoxide powder pressed Nb 41 250
NbC niobium carbide niobium carbide film as received Nb 41 249
Nbo niobium element elemenal niobium flat piece ion etched Nb 41 247
Nd native oxide neodymium native oxide neodymium native oxide film as received Nd 60 330
Nd2O3 neodymium oxide neodymium oxide powder pressed Nd 60 331
NdF3 neodymium fluoride neodymium fluoride powder pressed Nd 60 332
Ndo neodymium element elemental neodymium flat piece ion etched Nd 60 329
NH4Br ammonium bromide ammonium bromide crystallite crushed Br 35 225
NH4Ce(SO4)2 ammonium sulfate ammonium cerium sulfate powder pressed Ce 58 325
NH4Cl nitogen ammonium ammonium chloride crystallite cleaved Salammoniac N 7 37
NH4Cl nitrogen chloride ammonium chloride crystallite cleaved Salammoniac Cl 17 120
Ni native oxide nickel native oxide nickel native oxide film as received Ni 28 186
NiF2 nickel fluoride nickel difluoride powder pressed Ni 28 188
Nio nickel element elemental nickel flat piece ion etched Ni 28 185
NiO nickel oxide nickel oxide single crystal cleaved Busenite Ni 28 187
Os native oxide osmium native oxide osmium native oxide film as received Os 76 395
Oso osmium element elemental osmium flat piece ion etched Os 76 394
OsO2 osmium oxide osmium di-oxide powder pressed Os 76 396
Pb native oxide lead native oxide lead native oxide film as received Pb 82 418
PbCO3 lead carbonate lead carbonate natural crystal cleaved Cerrusite O 8 48
PbF2 lead fluoride lead difluoride powder pressed Pb 82 420
PbO lead oxide lead oxide powder pressed Litharge O 8 47
Pbo lead element elemental lead flat piece ion etched Pb 82 417
PbO lead oxide lead monoxide powder pressed Litharge Pb 82 419
p-Bromo-styrene bromine polymer p-bromo-styrene film none Br 35 224
PbS lead sulfide lead sulfide natural crystal cleaved Galena S 16 107
PbSe lead selenide lead selenide natural crystal cleaved Se 34 215
PbSe native oxide selenium native oxide selenium native oxide natural crystal as received Se 34 216
PbSeO4 lead selenate lead selenate powder as received Se 34 217
PbSO4 lead sulfate lead sulfate powder pressed S 16 108
PbTe lead telluride lead telluride single crystal cleaved Te 52 292
Pd native oxide palladium native oxide palladium native oxide film as received Pd 46 265
Pdo palladium element elemental palladium flat piece ion etched Pd 46 264
PdO palladium oxide palladium oxide powder pressed Pd 46 266
PET, Mylar carbon polymer PET, Mylar film as received O 8 61
p-Iodo-styrene iodine polymer p-iodo-styrene film evaporated solution I 53 299
Po phoshorus element elemental phosphorus lump ion etched P 15 92
PPS carbon sulfide poly-phenylene sulfide as received pressed S 16 113
Pr2O5 praseodymium oxide praseodymium pentoxide powder pressed Pr 59 327
PrF3 praseodymium fluoride praseodymium fluoride powder pressed Pr 59 328
Pro praseodymium element elemental praseodymium flat piece ion etched Pr 59 326
Pt native oxide platinum native oxide platinum native oxide film as received Pt 78 401
PtCl4 platinum chloride platinum tetra-chloride crystallite crushed Pt 78 403
Pto platinum element elemental platinum flat piece ion etched Pt 78 400
PtO2 platinum oxide platinum di-oxide powder pressed Pt 78 402
PtS2 platinum sulfide platinum di-sulfide powder pressed Pt 78 404
PVC carbon chloride Poly-vinyl chloride film as received Cl 17 122
Rb2SO4 rubidium sulfate rubidium sulfate powder pressed Rb 37 229
RbF rubidium fluoride rubidium fluoride bead crushed Rb 37 227
RbI rubidium iodide rubidium iodide powder pressed Rb 37 228
RbI rubidium iodide rubidium iodide powder pressed I 53 297
Rbo rubidium element elemental rubidium lump ion etched Rb 37 226
Re native oxide rhenium native oxide rhenium native oxide film as received Re 75 392
Re2O7 rhenium oxide rhenium hepta-oxide crystallite crushed Re 75 393
Reo rhenium element elemental rhenium flat piece ion etched Re 75 391
Rh native oxide rhodium native oxide rhodium native oxide film as received Rh 45 261
Rh2O3 rhodium oxide rhodium oxide powder pressed Rh 45 263
RhC rhodium carbide rhodium carbide film as received Rh 45 262
Rho rhodium element elemental rhodium flat piece ion etched Rh 45 260
Ru native oxide ruthenium native oxide ruthenium native oxide film as received Ru 44 258
Ruo ruthenium element elemental ruthenium flat piece ion etched Ru 44 257
RuO2 ruthenium oxide ruthenium oxide powder pressed Ru 44 259
Sb native oxide antimony native oxide antimony native oxide film as received Sb 51 285
Sb2O5 antimony oxide antimony pentoxide powder pressed Sb 51 286
SbF3 antimony fluoride antimony fluoride powder pressed Sb 51 287
Sbo antimony element elemental antimony flat piece ion etched Sb 51 284
Sc native oxide scandium native oxide scandium native oxide film as received Sc 21 155
Sc2O3 scandium oxide scandium oxide powder pressed Sc 21 156
ScC scandium carbide scandium carbide film as received Sc 21 154
Sco scandium element elemental scandium flat piece ion etched Sc 21 153
Se native oxide selenium native oxide selenium native oxide bead as received Se 34 214
Seo selenium elememt elemental selenium bead ion etched Se 34 213
Si native oxide silicon native oxide silicon native oxide film as received Si 14 87
Si3N4 silicon nitride silicon nitride single crystal cleaved N 7 41
SiC silicon carbide silicon carbide single crystal cleaved C 6 30
Si silicon element elemental silicon single crystal cleaved Si 14 86
SiO2 silicon oxide silicon oxide natural crystal cleaved Quartz O 8 60
SiO2 silicon oxide silicon oxide natural crystal cleaved Quartz Si 14 88
SiO2 silicon oxide silicon oxide amorphous solid fractured Si 14 89
Sm2O3 samarium oxide samarium oxide powder pressed Sm 62 334
SmF3 samarium fluoride samarium fluoride powder pressed Sm 62 335
Smo samarium element elemental samarium flat piece ion etched Sm 62 333
Sn native oxide tin native oxide tin native oxide film as received Sn 50 281
SnF4 tin fluoride tin tetra-fluoride powder pressed Sn 50 283
Sno tin element elemental tin flat piece ion etched Sn 50 280
SnO2 tin oxide tin oxide natural crystal cleaved Cassiterite Sn 50 282
So sulfur element elemental sulfur natural crystal cleaved S 16 98
SrBO3 strontium borate strontium borate single crystal cleaved Sr 38 234
SrCO3 strontium carbonate strontium carbonate powder pressed Sr 38 233
SrF2 strontium fluoride strontium fluoride powder pressed Sr 38 232
Sro strontium element elemental strontium lump ion etched Sr 38 230
SrSO4 strontium sulfate strontium sulfate natural crystal cleaved Celestine Sr 38 231
SrTiO3 strontium titanate strontium titanate single crystal cleaved Sr 38 235
Ta native oxide tantalum native oxide tantalum native oxide film as received Ta 73 382
Ta2O5 tantalum oxidwe tantalum pentoxide film as received Ta 73 384
TaC tantalum carbide tantalum carbide film as received Ta 73 383
TaF5 tantalum fluoride tantalum penta-fluoride powder pressed Ta 73 385
TaN tantalum nitride tantalum nitride coating ion etched N 7 35
Tao tantalum element elemental tantalum flat piece ion etched Ta 73 381
TaS2 tantalum sulfide tantalum sulfide natural crystal peeled Tantalite S 16 116
Tb native oxide terbium native oxide terbium native oxide film as received Tb 65 347
Tb2O3 terbium oxide terbium oxide powder pressed Tb 65 348
Tb4O7 terbium oxide terbium hepta-oxide powder pressed Tb 65 349
Tbo terbium element elemental terbium flat piece ion etched Tb 65 346
Te native oxide tellurium native oxide tellurium native oxide film as received Te 52 289
Teo tellurium element elemental tellurium flat piece ion etched Te 52 288
TeO2 tellurium oxide tellurium oxide powder pressed Tellurite Te 52 290
Th native oxide thorium native oxide thorium native oxide film as received Th 90 426
ThF4 thorium fluoride thorium fluoride powder pressed Th 90 428
Tho thorium element elemental thorium flat piece ion etched Th 90 425
ThO2 thorium oxide thorium oxide powder pressed Thorite Th 90 427
Ti native oxide titanium native oxide titanium native oxide film as received Ti 22 158
TiC titanium carbide titanium carbide film as received Ti 22 159
TiF4 titanium fluoride titanium tetrafluoride powder pressed Ti 22 161
TiN titanium nitride titanium nitride coating ion etched N 7 36
Tio titanium element elemental titanium flat piece ion etched Ti 22 157
TiO2 titanium oxide titanium dioxide single crystal cleaved Rutile Ti 22 160
Tl native oxide thallium native oxide thallium native oxide film as received Tl 81 414
Tl2O3 thallium oxide thallium oxide powder pressed Tl 81 415
TlNO3 thallium nitrate thallium nitrate powder pressed Tl 81 416
Tlo thallium element elemental thallium flat piece ion etched Tl 81 413
Tm native oxide thulium native oxide thulium native oxide film as received Tm 69 363
Tm2(SO4)3 thulium sulfate thulium sulfate powder pressed Tm 69 366
Tm2O3 thulium oxide thulium oxide powder pressed Tm 69 364
TmF3 thulium fluoride thulium fluoride powder pressed Tm 69 365
Tmo thulium element elemental thulium flat piece ion etched Tm 69 362
Tribromo-styrene bromine polymer tribromo-styrene film none Br 35 223
U native oxide uranium native oxide uranium native oxide film as received U 92 430
Uo uranium element elemental uranium flat piece ion etched U 92 429
UO2 uranium oxide uranium di-oxide grains  crushed Uraninite U 92 431
V native oxide vanadium native oxide vanadium native oxide film as received V 23 164
V2O3 vanadium oxide vanadium oxide powder pressed V 23 165
VC vanadium carbide vanadium carbide film as received V 23 163
Vo vanadium element elemental vanadium flat piece ion etched V 23 162
W native oxide tungsten native oxide tungsten native oxide film as received W 74 387
WC tungsten carbide tungsten carbide powder ion etched W 74 388
Wo tungsten element elemental tungsten flat piece ion etched W 74 386
WO3 tungsten oxide tungsten oxide powder pressed W 74 389
WS2 tungsten sulfide tungsten sulfide natural crystal crushed Tungstenite S 16 115
Y native oxide yttrium native oxide yttrium native oxide film as received Y 39 237
Y2(SO4)3 yttrium sulfate yttrium sulfate powder pressed Y 39 241
Y2O3 yttrium oxide yttrium oxide powder pressed Y 39 239
Yb native oxide ytterbium native oxide ytterbium native oxide film as received Yb 70 368
Yb2(CO3)3 – H2O ytterbium carbonate ytterbium carbonate powder pressed Yb 70 371
Yb2O3 ytterbium oxide ytterbium oxide powder pressed Yb 70 369
YbF3 ytterbium fluoride ytterbium fluoride powder pressed Yb 70 370
Ybo ytterbium element elemental ytterbium flat piece ion etched Yb 70 367
YC yttrium carbide yttrium carbide film as received Y 39 238
YF3 yttrium fluoride yttrium fluoride powder pressed Y 39 240
Yo yttrium element elemental yttrium flat piece ion etched Y 39 236
Zn native oxide zinc native oxide zinc native oxide film as received Zn 30 195
ZnF2 zinc fluoride zinc fluoride powder pressed Zn 30 197
Zno zinc element elemental zinc flat piece ion etched Zn 30 194
ZnO zinc oxide zinc oxide single crystal cleaved Zincite Zn 30 196
ZnS zinc sulfide zinc sulfide single crystal cleaved S 16 109
ZnSe zinc selenide zinc selenide single crystal cleaved Se 34 218
ZnSO4 zinc sulfate zinc sulfate powder pressed S 16 110
Zr native oxide zirconium native oxide zirconium native oxide film as received Zr 40 243
ZrC zirconium carbide zirconium carbide film as received Zr 40 244
ZrF4 zirconium fluoride zirconium fluoride powder pressed Zr 40 246
Zro zirconium element elemental zirconium flat piece ion etched Zr 40 242
ZrO2 zirconium oxide zirconium oxide powder pressed Zr 40 245
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